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SPA-2318
Product Description
Sirenza Microdevices' SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960 and 2140 MHz bands. Its high linearity makes it an ideal choice for multi-carrier and digital applications.
SPA-2318Z
& Green PreliminaryPackage
Pb
RoHS Compliant
1700-2200 MHz 1 Watt Power Amp with Active Bias
Product Features
The matte tin finish on Sirenza's lead-free package utilizes a post * Now available in Lead Free, RoHS annealing process to mitigate tin whisker formation and is RoHS Compliant, & Green Packaging compliant per EU Directive 2002/95. This package is also manu- * High Linearity Performance: factured with green molding compounds that contain no antimony +21 dBm IS-95 Channel Pwr at -55 dBc ACP trioxide nor halogenated fire retardants. +20.7 dBm W-CDMA Channel Pwr at -50dBc ACP
VC1 VBIAS RFIN VPC2
Active Bias
RFOUT/ VC2
+47 dBm Typ. OIP3 * On-chip Active Bias Control * High Gain: 24 dB Typ. at 1960 MHz * Patented High Reliability GaAsHBT Technology * Surface-Mountable Plastic Package
Applications
* W-CDMA Systems * PCS Systems * Multi-Carrier Applications
Symbol f0 P 1dB
Parameters: Test Conditions: Z0 = 50 Ohms Temp = 25C, Vcc = 5.0V Frequency of Operation Output Power at 1dB Compression[1] Adjacent Channel Power [1] IS-95 @ P OUT = 21.0 dBm W-CDMA @ P OUT = 20.7 dBm Small Signal Gain Input VSWR
[1,2] [1,2]
Units MHz f = 1960 MHz f = 2140 MHz f = 1960 MHz f = 2140 MHz f = 1960 MHz f = 2140 MHz f = 1960 MHz f = 2140 MHz dBm
Min. 1700
Typ.
Max. 2200
29.5 29.5 -55.0 -50.0 22.5 24.0 23.5 1.6:1 1.6:1 46.5 47.0 5.5 5.5 360
4.75
ACP
dBc
-47.0 25.0
S 21 VSWR OIP 3 NF
dB dBm dB
Output Third Order Intercept Point Power out per tone = +14dBm Noise Figure
[1,2]
[2]
f = 1960 MHz f = 2140 MHz f = 1960 MHz f = 2140 MHz Ibias = 10 mA Ic1 = 70 mA Ic2 = 320 mA
ICC V CC Rth j-l
Device Current Device Voltage
[1,2]
mA
400
5.0
425
5.25
[1,2]
V
C/W
Thermal Resistance (junction - lead), TL = 85C
31
[1] Optimal ACP tune
[2] Optimal IP3 tune
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com
EDS-101432 Rev H
SPA-2318 1700-2200 MHz 1 Watt Power Amp.
ACP Optimized 1960 MHz Application Circuit Data, Icc=400mA, Vcc=5V IS-95, 9 Channels Forward
1960 MHz Adjacent Channel Power vs. Channel Output Power
-40 -45 -50
dBc
-55 -60 -65 -70 -75 16 18 20 dBm 22 24
25C -40C 85C
IS-95 CDMA at 1960 MHz
T=25oC
23.75
24 dBm
21 dBm 17 dBm
13 dBm
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 2
http://www.sirenza.com
EDS-101432 Rev H
SPA-2318 1700-2200 MHz 1 Watt Power Amp.
ACP Optimized 1960 MHz Application Circuit Data, Icc=400mA, Vcc=5V
P1dB vs Frequency
31 30 29
24 30 27
Gain vs. Frequency
dBm
28 27
25C
dB
21
25C
26 25 1.93
85C -40C
18 15 1.93
85C -40C
1.94
1.95
1.96
1.97
1.98
1.99
1.94
1.95
1.96
1.97
1.98
1.99
GHz
GHz
Input/Output Return Loss, Isolation vs Frequency, T=25C
0 -5 -10 -15
Device Current vs. Source Voltage
600 500
Device Current (mA)
25C -4 0 C 85C
400 300 200 100 0
dB
-20 -25 -30 -35 -40 1.93
S11 S12 S22
1.94
1.95
1.96
1.97
1.98
1.99
0
1
2
3
4
5
6
GHz
Vcc (V)
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 3
http://www.sirenza.com
EDS-101432 Rev H
SPA-2318 1700-2200 MHz 1 Watt Power Amp.
1930 - 1990 MHz Schematic
Vcc 10uF Tantalum External Connection 68pF
Z=63 , 7.3
1000pF Ic1 8.2pF
Ic2
1.2nH 18nH 1.0pF
1 8 7 6 5
20 nH 20pF
Z=50 , 13.2
6.8K Ibias 1.5pF(IP3) 2.2pF(ACP) 300 Ohm
2 3 4
2.2pF
1200pF
Tune for optimal ACP performance
Vpc
1930 - 1990 MHz Evaluation Board Layout
Vcc
C5
Ref. Des. C1 C2 Value 1.5pF, 0.25pF (IP3) 2.2pF, 0.25pF (ACP) 1200pF, 5% 1.0pF, 0.25pF 68pF, 5% 10uF, 10% 1000pF, 5% 8.2pF, 0.5pF 2.2pF, 0.25pF 20pF, 5% 1.2nH, 0.3nH 18nH, 5% 20nH, 5% 6.8K Ohm, 5% 300 Ohm, 5% Part Number Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series AVX TAJB106K020R Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Toko LL1608-FS series Toko LL1608-FS series Coilcraft HQ 0805 series Rohm MCR03 series Rohm MCR03 series
C4 Short L2 L1 C3 C1 C6 C7
C3 C4 C5 C6 C7
R1
L3 C9
C8 C9 L1 L2 L3
C2
C8
R2
Tune for optimal ACP performance
Sirenza Microdevices ECB-101161 Rev. C SOIC-8 PA Eval Board Vpc
R1 R2
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 4
http://www.sirenza.com
EDS-101432 Rev H
SPA-2318 1700-2200 MHz 1 Watt Power Amp.
ACP Optimized 2140 MHz Application Circuit Data, Icc=400mA, Vcc=5V
W-CDMA setup is PCCPCH+PSCH+SSCH+CPICH+PICH+64 DPCH, 10.5 dB peak to average @ 0.001% probability W-CDMA at 2.14 GHz Adjacent Channel Power vs. Channel Output Power
-40 -45 -50
dBc
-55 -60
25C
-65 -70 16 17 18 19 dBm 20 21
-40C 85C
22
W-CDMA at 2.14 GHz
21.6
T=25oC
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 5
http://www.sirenza.com
EDS-101432 Rev H
SPA-2318 1700-2200 MHz 1 Watt Power Amp.
ACP Optimized 2140 MHz Application Circuit Data, Icc=400mA, Vcc=5V
P1dB vs Frequency
31 30 29
30
Gain vs. Frequency
27
dBm
24
28 27
25C
dB
21
25C
26 25 2.11
85C -40C
18
85C -40C
2.12
2.13
2.14
2.15
2.16
2.17
15 2.11
2.12
2.13
2.14
2.15
2.16
2.17
GHz
GHz
Input/Output Return Loss, Isolation vs Frequency, T=25C
0 -5 -10 -15
Device Current vs. Source Voltage
600
Device Current (mA)
500 400 300 200 100 0
25 C -40 C 85 C
dB
-20 -25 -30 -35 -40 2.11
S 11 S 12 S 22
2.12
2.13
2.14
2.15
2.16
2.17
0
1
2
3
4
5
6
GHz
Vcc (V)
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 6
http://www.sirenza.com
EDS-101432 Rev H
SPA-2318 1700-2200 MHz 1 Watt Power Amp.
2110 - 2170 MHz Schematic
Vcc 10uF Tantalum External Connection 56pF 1000pF
Z=63 , 21.7
Ic2
Ic1 5.6nH
1 8 7 6 5
5.6pF
2.7nH 6.8K Ibias 1.5pF (IP3) 2.2pF (ACP)
18 nH 39pF
Z=50 , 11.6
2 3 4
1.8pF
300 1800pF
Tune for optimal ACP performance
0.1uF Tantalum Vpc
2110 - 2170 MHz Evaluation Board Layout
Vcc
C3
Ref. Des. C1 C2 Value 1.5pF, 0.25pF (IP3) 2.2pF, 0.25pF (ACP) 56pF, 5% 10uF, 10% 1000pF, 5% 5.6pF, 0.5pF 1.8pF, 0.25pF 1800pF, 5% 0.1uF, 10% 39pF, 5% 2.7nH, 0.3nH 5.6nH, 0.3nH 18nH, 5% 6.8K Ohm, 5% 300 Ohm, 5% Part Number Rohm MCH18 series Rohm MCH18 series AVX TAJB106K020R Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Matsuo 267M3502104K Rohm MCH18 series Toko LL1608-FS series Toko LL1608-FS series Toko LL1608-FS series Rohm MCR03 series Rohm MCR03 series
C2 Short L2 L1 C1
C4
C3 C4 C5
C5
C6 C7
R1
L3
C8
C9 C7 C6
Tune for optimal ACP performance
C9 L1 L2 L3
R2
C8
Note: All inductors are Toko LL1608-FS unless noted otherwise
Sirenza Microdevices ECB-101161 Rev. C SOIC-8 PA Eval Board
R1 R2
Vpc
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 7
http://www.sirenza.com
EDS-101432 Rev H
SPA-2318 1700-2200 MHz 1 Watt Power Amp.
Pin # 1 2 3 4 5, 6, 7, 8
Function VC1 Vbias RF In VPC2
Description VC1 is the supply voltage for the first stage transistor. The configuration as shown on application schematic is required for optimum RF performance. Vbias is the bias control pin for the active bias network. Recommended configuration is shown in the Application Schematic. RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the Application Schematic. VPC2 is the bias control pin for the active bias network for the second stage. The recommended configuration is shown in the Application Schematic.
RF Out/VC2 RF output and bias pins. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. Gnd Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 9).
EPAD
Simplified Device Schematic
4 2 1
2
ACTIVE BIAS NETWORK
5-8
ACTIVE BIAS NETWORK
Absolute Maximum Ratings
3
Parameter (Ta = 25C) Max. Supply Current (IC1) at VCC typ. Max. Supply Current (IC2) at VCC typ. Max. Device Voltage (VCC) at Icc typ. Max. RF Input Power Max. Junction Temp. (TJ)
Absolute Limit 150 mA 750 mA 6.0 V 16 dBm +160 C +150 C
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed. The Moisture Sensitivity Level rating for this device is level 1 (MSL-1) based on the JEDEC 22-A113 standard classification. No special moisture packaging/handling is required during storage, shipment, or installation of the devices.
Max. Storage Temp.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: ICCVCC (max) < (TJ - TL)/Rth,j-l
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 8
http://www.sirenza.com
EDS-101432 Rev H
SPA-2318 1700-2200 MHz 1 Watt Power Amp.
Package Outline Drawing (See SMDI MPO-101644 for tolerances, available on our website)
8 7 6 5 .194 [4.93] EXPOSED PAD
.236 [5.994] .155 [3.937]
1
2
3 .045 [1.143] .035 [.889]
4 Beveled Edge
TOP VIEW
BOTTOM VIEW
.050 [1.27]
.016 [.406] .061 [1.549] .008 [.203]
.058 [1.473]
.013 [.33] x 45
.008
.194 [4.928] .003 [.076] SIDE VIEW SEATING PLANE SEE DETAIL A
.155 [3.937]
END VIEW
PARTING LINE
Part Number Ordering Information
Part Number
.025 5 DETAIL A
Reel Size
Devices/Reel
SPA-2318 SPA-2318Z
7" 7"
500 500
Note: DIMENSIONS ARE IN INCHES [MM]
Recommended Land Pattern Part Identification Marking
0.150 [3.81] Plated-Thru Holes (0.015" Dia, 0.030" Pitch) Machine Screws 0.080 [2.03] 0.050 [1.27] 0.020 [0.51] 0.140 [3.56] 0.300 [7.62]
Lot ID SPA-2318
Lot ID SPA-2318Z
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 9
http://www.sirenza.com
EDS-101432 Rev H

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